Show Hamamatsu Avalanche Photo Diode 1210013403
This is all the information about APD 1210013403. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1210013403 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E12 |
| Break-through voltage: |
444 V |
| Voltage for Gain 100 (T=+25°C): |
415.5 V |
| Dark current: |
11.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
347 |
| Position in Box: |
24 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10526 |
| |
|
| Shipment: |
|
| Grid number: |
282 |
| Position in grid: |
11 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 415.8934029 V T = -25 °C: 378.9104641 V |
| Voltage for Gain 150: |
T = +20 °C: 423.8505626 V T = -25 °C: 386.8291289 V |
| Voltage for Gain 200: |
T = +20 °C: 428.2678818 V T = -25 °C: 391.2237157 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.55477972 V-1 T = -25 °C: 4.574404181 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.970024021 V-1 T = -25 °C: 9.057331048 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.90928859 V-1 T = -25 °C: 13.99392796 V-1 |
| Break-through voltage: |
T = +20 °C: 439.9788455 V T = -25 °C: 406.942888 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
