Show Hamamatsu Avalanche Photo Diode 1210013396
This is all the information about APD 1210013396. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1210013396 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D03 |
| Break-through voltage: |
439 V |
| Voltage for Gain 100 (T=+25°C): |
409.7 V |
| Dark current: |
7.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
347 |
| Position in Box: |
18 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10526 |
| |
|
| Shipment: |
|
| Grid number: |
282 |
| Position in grid: |
5 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 410.0343459 V T = -25 °C: 373.0793098 V |
| Voltage for Gain 150: |
T = +20 °C: 418.0110883 V T = -25 °C: 381.0223301 V |
| Voltage for Gain 200: |
T = +20 °C: 422.4330721 V T = -25 °C: 385.4410253 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.485548568 V-1 T = -25 °C: 4.495682526 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.791469769 V-1 T = -25 °C: 8.767095309 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.29417313 V-1 T = -25 °C: 15.28488247 V-1 |
| Break-through voltage: |
T = +20 °C: 438.2843989 V T = -25 °C: 401.6683942 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
