Show Hamamatsu Avalanche Photo Diode 1209013363
This is all the information about APD 1209013363. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1209013363 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F03 |
| Break-through voltage: |
447 V |
| Voltage for Gain 100 (T=+25°C): |
418 V |
| Dark current: |
10.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
303 |
| Position in Box: |
44 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10373 |
| |
|
| Shipment: |
|
| Grid number: |
280 |
| Position in grid: |
14 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
27. Oct 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
25. Oct 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
418 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 418.2309941 V T = -25 °C: 381.0710054 V |
| Voltage for Gain 150: |
T = +20 °C: 426.2733944 V T = -25 °C: 389.0488597 V |
| Voltage for Gain 200: |
T = +20 °C: 430.7387454 V T = -25 °C: 393.4838543 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.441032941 V-1 T = -25 °C: 4.517747856 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.502412852 V-1 T = -25 °C: 8.778432323 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.6120488 V-1 T = -25 °C: 15.34686521 V-1 |
| Break-through voltage: |
T = +20 °C: 439.9779254 V T = -25 °C: 409.5928833 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
