Show Hamamatsu Avalanche Photo Diode 1209013352
This is all the information about APD 1209013352. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1209013352 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
F04 |
Break-through voltage: |
445 V |
Voltage for Gain 100 (T=+25°C): |
416.7 V |
Dark current: |
10.1 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
303 |
Position in Box: |
34 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10373 |
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Shipment: |
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Grid number: |
280 |
Position in grid: |
3 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
27. Oct 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
25. Oct 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
1 |
Bias voltage: |
416.7 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 416.9021722 V T = -25 °C: 379.8927367 V |
Voltage for Gain 150: |
T = +20 °C: 424.8854796 V T = -25 °C: 387.7941917 V |
Voltage for Gain 200: |
T = +20 °C: 429.3269286 V T = -25 °C: 392.1823049 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.544481757 V-1 T = -25 °C: 4.569523039 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.872608639 V-1 T = -25 °C: 9.049363859 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 13.70774416 V-1 T = -25 °C: 14.07241833 V-1 |
Break-through voltage: |
T = +20 °C: 439.9579889 V T = -25 °C: 408.0666792 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history