Show Hamamatsu Avalanche Photo Diode 1209013338
This is all the information about APD 1209013338. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
1209013338 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
H08 |
Break-through voltage: |
444 V |
Voltage for Gain 100 (T=+25°C): |
416.4 V |
Dark current: |
9.6 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
338 |
Position in Box: |
27 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10695 |
|
|
Shipment: |
|
Grid number: |
279 |
Position in grid: |
9 |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 417.7684791 V T = -25 °C: 381.1702129 V |
Voltage for Gain 150: |
T = +20 °C: 425.7241436 V T = -25 °C: 389.0964522 V |
Voltage for Gain 200: |
T = +20 °C: 430.1365263 V T = -25 °C: 393.4753563 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.638064082 V-1 T = -25 °C: 4.507911481 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.13033891 V-1 T = -25 °C: 8.879294572 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.14890528 V-1 T = -25 °C: 15.60258751 V-1 |
Break-through voltage: |
T = +20 °C: 443.9480555 V T = -25 °C: 407.6697785 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history