Show Hamamatsu Avalanche Photo Diode 1209013333
This is all the information about APD 1209013333. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1209013333 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
H07 |
| Break-through voltage: |
442 V |
| Voltage for Gain 100 (T=+25°C): |
414.5 V |
| Dark current: |
9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
338 |
| Position in Box: |
23 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10695 |
| |
|
| Shipment: |
|
| Grid number: |
279 |
| Position in grid: |
4 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 416.4432331 V T = -25 °C: 379.6140728 V |
| Voltage for Gain 150: |
T = +20 °C: 424.4216099 V T = -25 °C: 387.5149894 V |
| Voltage for Gain 200: |
T = +20 °C: 428.8347584 V T = -25 °C: 391.8778592 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.382001766 V-1 T = -25 °C: 4.353127435 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.489050542 V-1 T = -25 °C: 8.525566482 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.76319284 V-1 T = -25 °C: 14.82808826 V-1 |
| Break-through voltage: |
T = +20 °C: 441.4881989 V T = -25 °C: 405.5423683 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
