Show Hamamatsu Avalanche Photo Diode 1208013270
This is all the information about APD 1208013270. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1208013270 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E09 |
| Break-through voltage: |
431 V |
| Voltage for Gain 100 (T=+25°C): |
402.5 V |
| Dark current: |
9.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
376 |
| Position in Box: |
22 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
none |
| |
|
| Shipment: |
|
| Grid number: |
276 |
| Position in grid: |
10 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
23. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
22. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
3 |
| Bias voltage: |
402.5 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 403.4702966 V T = -25 °C: 366.4101337 V |
| Voltage for Gain 150: |
T = +20 °C: 411.4721511 V T = -25 °C: 374.3318337 V |
| Voltage for Gain 200: |
T = +20 °C: 415.9060912 V T = -25 °C: 378.7203384 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.353018847 V-1 T = -25 °C: 4.473432151 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.439594073 V-1 T = -25 °C: 8.579152703 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.51385307 V-1 T = -25 °C: 14.68702468 V-1 |
| Break-through voltage: |
T = +20 °C: 431.3287552 V T = -25 °C: 394.528895 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
