Show Hamamatsu Avalanche Photo Diode 1207013219
This is all the information about APD 1207013219. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1207013219 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G10 |
| Break-through voltage: |
440 V |
| Voltage for Gain 100 (T=+25°C): |
411.5 V |
| Dark current: |
9.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
288 |
| Position in Box: |
35 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10200 |
| |
|
| Shipment: |
|
| Grid number: |
274 |
| Position in grid: |
9 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
22. Feb 2018 |
| Dose used: |
30 Gy |
| Temperature: |
25 °C |
| Position: |
3 |
| Bias voltage: |
0 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 411.9526185 V T = -25 °C: 375.7457434 V |
| Voltage for Gain 150: |
T = +20 °C: 419.9035602 V T = -25 °C: 383.7595496 V |
| Voltage for Gain 200: |
T = +20 °C: 424.2877505 V T = -25 °C: 388.2351129 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.620060663 V-1 T = -25 °C: 4.344946544 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.257211914 V-1 T = -25 °C: 9.059747499 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.06914839 V-1 T = -25 °C: 13.97485653 V-1 |
| Break-through voltage: |
T = +20 °C: 431.1358153 V T = -25 °C: 403.1432535 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
