Show Hamamatsu Avalanche Photo Diode 1207013215
This is all the information about APD 1207013215. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1207013215 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F09 |
| Break-through voltage: |
437 V |
| Voltage for Gain 100 (T=+25°C): |
408.6 V |
| Dark current: |
10.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
288 |
| Position in Box: |
31 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10200 |
| |
|
| Shipment: |
|
| Grid number: |
274 |
| Position in grid: |
5 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
22. Feb 2018 |
| Dose used: |
30 Gy |
| Temperature: |
25 °C |
| Position: |
3 |
| Bias voltage: |
0 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 408.8470813 V T = -25 °C: 371.9585435 V |
| Voltage for Gain 150: |
T = +20 °C: 416.8427256 V T = -25 °C: 379.8677875 V |
| Voltage for Gain 200: |
T = +20 °C: 421.3314927 V T = -25 °C: 384.2645931 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.427285848 V-1 T = -25 °C: 4.600629708 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.994617774 V-1 T = -25 °C: 9.022359826 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.13297064 V-1 T = -25 °C: 14.0356496 V-1 |
| Break-through voltage: |
T = +20 °C: 435.3478393 V T = -25 °C: 399.8036129 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
