Show Hamamatsu Avalanche Photo Diode 1206013159
This is all the information about APD 1206013159. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1206013159 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Giessen (mounted in Slice) |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E01 |
Break-through voltage: |
426 V |
Voltage for Gain 100 (T=+25°C): |
399.9 V |
Dark current: |
12.5 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
293 |
Position in Box: |
10 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10207 |
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Shipment: |
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Grid number: |
271 |
Position in grid: |
9 |
Arrival for irradiation: |
11. Jul 2016 |
Sent for analysis after irradiation: |
15. Jul 2016 |
Return for assembly: |
19. Sep 2016 |
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Irradiation: |
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Date: |
13. Jul 2016 |
Dose used: |
30 Gy |
Temperature: |
25 °C |
Position: |
1 |
Bias voltage: |
320 V (connection unknown) |
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Annealing: |
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Date: |
13. Jul 2016 |
Temperature: |
80 °C |
Duration: |
10 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 400.8253265 V T = -25 °C: 363.7801366 V |
Voltage for Gain 150: |
T = +20 °C: 408.847459 V T = -25 °C: 371.6738118 V |
Voltage for Gain 200: |
T = +20 °C: 413.2938195 V T = -25 °C: 376.0624077 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.492928154 V-1 T = -25 °C: 4.613867887 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.799771201 V-1 T = -25 °C: 9.074535076 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.3722674 V-1 T = -25 °C: 14.16190058 V-1 |
Break-through voltage: |
T = +20 °C: 425.3938147 V T = -25 °C: 389.0710296 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history