Show Hamamatsu Avalanche Photo Diode 1205013083
This is all the information about APD 1205013083. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1205013083 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G05 |
| Break-through voltage: |
431 V |
| Voltage for Gain 100 (T=+25°C): |
406 V |
| Dark current: |
9.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
45 |
| Position in Box: |
5 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10073 |
| |
|
| Shipment: |
|
| Grid number: |
267 |
| Position in grid: |
16 |
| Arrival for irradiation: |
11. Jul 2016 |
| Sent for analysis after irradiation: |
15. Jul 2016 |
| Return for assembly: |
19. Sep 2016 |
| |
|
| Irradiation: |
|
| Date: |
13. Jul 2016 |
| Dose used: |
30 Gy |
| Temperature: |
25 °C |
| Position: |
1 |
| Bias voltage: |
320 V (connection unknown) |
| |
|
| Annealing: |
|
| Date: |
13. Jul 2016 |
| Temperature: |
80 °C |
| Duration: |
10 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 406.9516275 V T = -25 °C: 369.8862362 V |
| Voltage for Gain 150: |
T = +20 °C: 414.9109965 V T = -25 °C: 377.8358865 V |
| Voltage for Gain 200: |
T = +20 °C: 419.3294906 V T = -25 °C: 382.2381119 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.443225879 V-1 T = -25 °C: 4.234617043 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.043273455 V-1 T = -25 °C: 8.965272386 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.85081441 V-1 T = -25 °C: 15.5801732 V-1 |
| Break-through voltage: |
T = +20 °C: 435.2643235 V T = -25 °C: 398.4263933 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
