Show Hamamatsu Avalanche Photo Diode 1205013045
This is all the information about APD 1205013045. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
1205013045 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
D11 |
Break-through voltage: |
441 V |
Voltage for Gain 100 (T=+25°C): |
412.1 V |
Dark current: |
11.4 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
372 |
Position in Box: |
12 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10567 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 413.3736261 V T = -25 °C: 376.5550621 V |
Voltage for Gain 150: |
T = +20 °C: 421.1777684 V T = -25 °C: 384.3586914 V |
Voltage for Gain 200: |
T = +20 °C: 425.5192975 V T = -25 °C: 388.6875302 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.48125753 V-1 T = -25 °C: 4.446379629 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.896381869 V-1 T = -25 °C: 8.750919858 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.58886754 V-1 T = -25 °C: 15.2791391 V-1 |
Break-through voltage: |
T = +20 °C: 439.8767393 V T = -25 °C: 403.9490999 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history