Show Hamamatsu Avalanche Photo Diode 1204012970
This is all the information about APD 1204012970. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
1204012970 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
E09 |
Break-through voltage: |
434 V |
Voltage for Gain 100 (T=+25°C): |
404.7 V |
Dark current: |
14.2 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
335 |
Position in Box: |
10 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10502 |
|
|
Shipment: |
|
Grid number: |
262 |
Position in grid: |
10 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 405.559792 V T = -25 °C: 368.1424564 V |
Voltage for Gain 150: |
T = +20 °C: 413.555628 V T = -25 °C: 376.0642132 V |
Voltage for Gain 200: |
T = +20 °C: 417.9726051 V T = -25 °C: 380.4762816 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.335874836 V-1 T = -25 °C: 4.538636167 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.246838861 V-1 T = -25 °C: 8.794721926 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.30120294 V-1 T = -25 °C: 15.36277442 V-1 |
Break-through voltage: |
T = +20 °C: 433.5318578 V T = -25 °C: 396.1994304 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history