Show Hamamatsu Avalanche Photo Diode 1204012967
This is all the information about APD 1204012967. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1204012967 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E06 |
Break-through voltage: |
432 V |
Voltage for Gain 100 (T=+25°C): |
403.5 V |
Dark current: |
14 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
335 |
Position in Box: |
8 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10502 |
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Shipment: |
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Grid number: |
262 |
Position in grid: |
8 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 404.4628543 V T = -25 °C: 367.1594169 V |
Voltage for Gain 150: |
T = +20 °C: 412.4217867 V T = -25 °C: 375.0605542 V |
Voltage for Gain 200: |
T = +20 °C: 416.8255956 V T = -25 °C: 379.4654092 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.396264721 V-1 T = -25 °C: 4.5454557 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.533385437 V-1 T = -25 °C: 8.871998641 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.76678696 V-1 T = -25 °C: 15.48375376 V-1 |
Break-through voltage: |
T = +20 °C: 432.2265229 V T = -25 °C: 395.1857491 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
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Progression of the current during irradiation
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Version history