Show Hamamatsu Avalanche Photo Diode 1203012935
This is all the information about APD 1203012935. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1203012935 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
C06 |
Break-through voltage: |
438 V |
Voltage for Gain 100 (T=+25°C): |
409.1 V |
Dark current: |
10.8 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
288 |
Position in Box: |
26 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10199 |
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Shipment: |
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Grid number: |
260 |
Position in grid: |
16 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
22. Feb 2018 |
Dose used: |
30 Gy |
Temperature: |
25 °C |
Position: |
1 |
Bias voltage: |
0 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 409.5881899 V T = -25 °C: 372.92729 V |
Voltage for Gain 150: |
T = +20 °C: 417.6420387 V T = -25 °C: 380.8729385 V |
Voltage for Gain 200: |
T = +20 °C: 422.1046897 V T = -25 °C: 385.2940219 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.313956712 V-1 T = -25 °C: 4.600149615 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.113528593 V-1 T = -25 °C: 9.006581955 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.1051734 V-1 T = -25 °C: 13.89063975 V-1 |
Break-through voltage: |
T = +20 °C: 437.4949392 V T = -25 °C: 400.8732728 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history