Show Hamamatsu Avalanche Photo Diode 1203012934
This is all the information about APD 1203012934. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1203012934 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G07 |
| Break-through voltage: |
437 V |
| Voltage for Gain 100 (T=+25°C): |
407.6 V |
| Dark current: |
9.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
288 |
| Position in Box: |
25 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10199 |
| |
|
| Shipment: |
|
| Grid number: |
260 |
| Position in grid: |
15 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
22. Feb 2018 |
| Dose used: |
30 Gy |
| Temperature: |
25 °C |
| Position: |
1 |
| Bias voltage: |
0 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 407.6157705 V T = -25 °C: 370.8978914 V |
| Voltage for Gain 150: |
T = +20 °C: 415.6846366 V T = -25 °C: 378.8829372 V |
| Voltage for Gain 200: |
T = +20 °C: 420.1672602 V T = -25 °C: 383.3322573 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.304087115 V-1 T = -25 °C: 4.564462626 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.038249373 V-1 T = -25 °C: 8.905511175 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.88619511 V-1 T = -25 °C: 13.73895187 V-1 |
| Break-through voltage: |
T = +20 °C: 429.0856378 V T = -25 °C: 399.6461927 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
