Show Hamamatsu Avalanche Photo Diode 1203012924
This is all the information about APD 1203012924. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
1203012924 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
F09 |
Break-through voltage: |
437 V |
Voltage for Gain 100 (T=+25°C): |
409.4 V |
Dark current: |
10.6 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
288 |
Position in Box: |
15 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10199 |
|
|
Shipment: |
|
Grid number: |
260 |
Position in grid: |
5 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
22. Feb 2018 |
Dose used: |
30 Gy |
Temperature: |
25 °C |
Position: |
1 |
Bias voltage: |
0 V (connected) |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 409.1181572 V T = -25 °C: 372.4892811 V |
Voltage for Gain 150: |
T = +20 °C: 417.1628007 V T = -25 °C: 380.4297317 V |
Voltage for Gain 200: |
T = +20 °C: 421.630348 V T = -25 °C: 384.8332884 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.472541193 V-1 T = -25 °C: 4.433969544 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.757887787 V-1 T = -25 °C: 8.641860462 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.32847419 V-1 T = -25 °C: 15.03010394 V-1 |
Break-through voltage: |
T = +20 °C: 436.7661741 V T = -25 °C: 400.2427585 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history