Show Hamamatsu Avalanche Photo Diode 1203012915
This is all the information about APD 1203012915. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1203012915 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
G11 |
Break-through voltage: |
441 V |
Voltage for Gain 100 (T=+25°C): |
414 V |
Dark current: |
10.5 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
304 |
Position in Box: |
20 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10374 |
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Shipment: |
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Grid number: |
259 |
Position in grid: |
17 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
20. Oct 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
16. Oct 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
2 |
Bias voltage: |
414 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 414.150001 V T = -25 °C: 378.1135368 V |
Voltage for Gain 150: |
T = +20 °C: 422.1865574 V T = -25 °C: 385.9379587 V |
Voltage for Gain 200: |
T = +20 °C: 426.6505875 V T = -25 °C: 390.2848644 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.431122279 V-1 T = -25 °C: 4.578079949 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.624553848 V-1 T = -25 °C: 9.142582645 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.93876263 V-1 T = -25 °C: 14.16803165 V-1 |
Break-through voltage: |
T = +20 °C: 438.59504 V T = -25 °C: 406.222831 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history