Show Hamamatsu Avalanche Photo Diode 1203012908
This is all the information about APD 1203012908. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1203012908 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
B10 |
Break-through voltage: |
443 V |
Voltage for Gain 100 (T=+25°C): |
414.2 V |
Dark current: |
11 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
376 |
Position in Box: |
15 |
EP1 batch: |
none |
EP1 batch after irradiation: |
none |
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Shipment: |
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Grid number: |
259 |
Position in grid: |
11 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
20. Oct 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
16. Oct 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
2 |
Bias voltage: |
414.2 V (not connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 415.0284322 V T = -25 °C: 378.1021614 V |
Voltage for Gain 150: |
T = +20 °C: 422.9611686 V T = -25 °C: 386.0311816 V |
Voltage for Gain 200: |
T = +20 °C: 427.3664196 V T = -25 °C: 390.4320586 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.511309285 V-1 T = -25 °C: 4.496573953 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.889003547 V-1 T = -25 °C: 8.791087406 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.52977909 V-1 T = -25 °C: 15.40848955 V-1 |
Break-through voltage: |
T = +20 °C: 439.9021051 V T = -25 °C: 406.085044 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history