Show Hamamatsu Avalanche Photo Diode 1203012906
This is all the information about APD 1203012906. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1203012906 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E13 |
Break-through voltage: |
445 V |
Voltage for Gain 100 (T=+25°C): |
416.1 V |
Dark current: |
11.6 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
376 |
Position in Box: |
14 |
EP1 batch: |
none |
EP1 batch after irradiation: |
none |
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Shipment: |
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Grid number: |
259 |
Position in grid: |
9 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
20. Oct 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
16. Oct 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
2 |
Bias voltage: |
416.1 V (not connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 416.4302104 V T = -25 °C: 379.6233922 V |
Voltage for Gain 150: |
T = +20 °C: 424.3629724 V T = -25 °C: 387.5478086 V |
Voltage for Gain 200: |
T = +20 °C: 428.7569024 V T = -25 °C: 391.8995944 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.378943868 V-1 T = -25 °C: 4.234637964 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.536459453 V-1 T = -25 °C: 9.38301028 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.70301061 V-1 T = -25 °C: 14.650062 V-1 |
Break-through voltage: |
T = +20 °C: 439.8953158 V T = -25 °C: 408.1284982 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history