Show Hamamatsu Avalanche Photo Diode 1203012900
This is all the information about APD 1203012900. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1203012900 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E06 |
Break-through voltage: |
434 V |
Voltage for Gain 100 (T=+25°C): |
405.2 V |
Dark current: |
12.5 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
376 |
Position in Box: |
13 |
EP1 batch: |
none |
EP1 batch after irradiation: |
none |
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Shipment: |
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Grid number: |
259 |
Position in grid: |
3 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
20. Oct 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
16. Oct 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
2 |
Bias voltage: |
405.2 V (not connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 405.4054887 V T = -25 °C: 368.2326829 V |
Voltage for Gain 150: |
T = +20 °C: 413.5161792 V T = -25 °C: 376.2288244 V |
Voltage for Gain 200: |
T = +20 °C: 418.0099583 V T = -25 °C: 380.6921444 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.322890655 V-1 T = -25 °C: 4.471705543 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.250479446 V-1 T = -25 °C: 8.710104159 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.01371774 V-1 T = -25 °C: 14.73979837 V-1 |
Break-through voltage: |
T = +20 °C: 434.2626969 V T = -25 °C: 397.0900954 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history