Show Hamamatsu Avalanche Photo Diode 1203012899
This is all the information about APD 1203012899. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
1203012899 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
B13 |
Break-through voltage: |
445 V |
Voltage for Gain 100 (T=+25°C): |
417.3 V |
Dark current: |
12 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
304 |
Position in Box: |
9 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10374 |
|
|
Shipment: |
|
Grid number: |
259 |
Position in grid: |
2 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
20. Oct 2017 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
16. Oct 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
2 |
Bias voltage: |
417.3 V (connected) |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 417.3026396 V T = -25 °C: 380.5111396 V |
Voltage for Gain 150: |
T = +20 °C: 425.2518859 V T = -25 °C: 388.4172231 V |
Voltage for Gain 200: |
T = +20 °C: 429.676877 V T = -25 °C: 392.8068183 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.453901013 V-1 T = -25 °C: 4.411220784 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.682405801 V-1 T = -25 °C: 8.62959262 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.17566366 V-1 T = -25 °C: 14.978903 V-1 |
Break-through voltage: |
T = +20 °C: 438.6091635 V T = -25 °C: 408.4923191 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history