Show Hamamatsu Avalanche Photo Diode 1202012851
This is all the information about APD 1202012851. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1202012851 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F05 |
| Break-through voltage: |
432 V |
| Voltage for Gain 100 (T=+25°C): |
403.5 V |
| Dark current: |
10.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
365 |
| Position in Box: |
35 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10556 |
| |
|
| Shipment: |
|
| Grid number: |
257 |
| Position in grid: |
3 |
| Arrival for irradiation: |
02. Nov 2017 |
| Sent for analysis after irradiation: |
23. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
403.5 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 404.1392478 V T = -25 °C: 367.3623164 V |
| Voltage for Gain 150: |
T = +20 °C: 412.0164596 V T = -25 °C: 375.2228388 V |
| Voltage for Gain 200: |
T = +20 °C: 416.3681332 V T = -25 °C: 379.5838554 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.497828184 V-1 T = -25 °C: 4.446610754 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.876398478 V-1 T = -25 °C: 8.693761505 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.41146949 V-1 T = -25 °C: 14.98779394 V-1 |
| Break-through voltage: |
T = +20 °C: 429.1148627 V T = -25 °C: 395.5432556 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
