Show Hamamatsu Avalanche Photo Diode 1202012849
This is all the information about APD 1202012849. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1202012849 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
C07 |
Break-through voltage: |
434 V |
Voltage for Gain 100 (T=+25°C): |
405.5 V |
Dark current: |
8.8 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
365 |
Position in Box: |
34 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10556 |
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Shipment: |
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Grid number: |
257 |
Position in grid: |
1 |
Arrival for irradiation: |
02. Nov 2017 |
Sent for analysis after irradiation: |
23. Nov 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
16. Nov 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
1 |
Bias voltage: |
405.5 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 406.5690336 V T = -25 °C: 369.6547405 V |
Voltage for Gain 150: |
T = +20 °C: 414.4615618 V T = -25 °C: 377.5461023 V |
Voltage for Gain 200: |
T = +20 °C: 418.8455531 V T = -25 °C: 381.916114 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.37213083 V-1 T = -25 °C: 4.391962946 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.676458402 V-1 T = -25 °C: 8.52073172 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.69813414 V-1 T = -25 °C: 14.63182581 V-1 |
Break-through voltage: |
T = +20 °C: 433.4422475 V T = -25 °C: 396.9324519 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
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Progression of the current during irradiation
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Version history