Show Hamamatsu Avalanche Photo Diode 1202012809
This is all the information about APD 1202012809. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1202012809 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E08 |
Break-through voltage: |
432 V |
Voltage for Gain 100 (T=+25°C): |
403 V |
Dark current: |
10.2 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
379 |
Position in Box: |
7 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10579 |
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Shipment: |
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Grid number: |
255 |
Position in grid: |
2 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
23. Nov 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
22. Nov 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
1 |
Bias voltage: |
403 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 403.3444263 V T = -25 °C: 366.3515273 V |
Voltage for Gain 150: |
T = +20 °C: 411.3355487 V T = -25 °C: 374.2200527 V |
Voltage for Gain 200: |
T = +20 °C: 415.7648815 V T = -25 °C: 378.5952866 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.394400436 V-1 T = -25 °C: 4.468078782 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.535057362 V-1 T = -25 °C: 8.749910068 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.78205162 V-1 T = -25 °C: 15.3017179 V-1 |
Break-through voltage: |
T = +20 °C: 431.4680381 V T = -25 °C: 394.4627643 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history