Show Hamamatsu Avalanche Photo Diode 1201012784
This is all the information about APD 1201012784. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1201012784 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
C06 |
Break-through voltage: |
443 V |
Voltage for Gain 100 (T=+25°C): |
414 V |
Dark current: |
7.9 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
304 |
Position in Box: |
36 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10375 |
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Shipment: |
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Grid number: |
253 |
Position in grid: |
17 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
27. Oct 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
25. Oct 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
1 |
Bias voltage: |
414 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 414.6742716 V T = -25 °C: 377.8345026 V |
Voltage for Gain 150: |
T = +20 °C: 422.653474 V T = -25 °C: 385.7234495 V |
Voltage for Gain 200: |
T = +20 °C: 427.0664729 V T = -25 °C: 390.0855873 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.296336735 V-1 T = -25 °C: 4.645781357 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.199883268 V-1 T = -25 °C: 9.237126769 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.31662833 V-1 T = -25 °C: 14.46026984 V-1 |
Break-through voltage: |
T = +20 °C: 439.9874029 V T = -25 °C: 405.4010162 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
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Progression of the current during irradiation
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Version history