Show Hamamatsu Avalanche Photo Diode 1201012779
This is all the information about APD 1201012779. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1201012779 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E09 |
Break-through voltage: |
440 V |
Voltage for Gain 100 (T=+25°C): |
410.8 V |
Dark current: |
8.9 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
379 |
Position in Box: |
4 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10579 |
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Shipment: |
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Grid number: |
253 |
Position in grid: |
7 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
27. Oct 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
25. Oct 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
1 |
Bias voltage: |
410.8 V (not connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 411.0630867 V T = -25 °C: 373.6854698 V |
Voltage for Gain 150: |
T = +20 °C: 419.0690569 V T = -25 °C: 381.661387 V |
Voltage for Gain 200: |
T = +20 °C: 423.5189704 V T = -25 °C: 386.0793204 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.499029582 V-1 T = -25 °C: 4.35066493 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.83018143 V-1 T = -25 °C: 9.230048025 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.3814586 V-1 T = -25 °C: 14.36094592 V-1 |
Break-through voltage: |
T = +20 °C: 439.059824 V T = -25 °C: 402.1002534 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history