Show Hamamatsu Avalanche Photo Diode 1201012763
This is all the information about APD 1201012763. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1201012763 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E03 |
| Break-through voltage: |
445 V |
| Voltage for Gain 100 (T=+25°C): |
416.1 V |
| Dark current: |
9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
334 |
| Position in Box: |
35 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10766 |
| |
|
| Shipment: |
|
| Grid number: |
252 |
| Position in grid: |
15 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 416.5157021 V T = -25 °C: 379.2252673 V |
| Voltage for Gain 150: |
T = +20 °C: 424.5616891 V T = -25 °C: 387.2303688 V |
| Voltage for Gain 200: |
T = +20 °C: 429.0057065 V T = -25 °C: 391.6730569 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.332206191 V-1 T = -25 °C: 4.460215405 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.359469363 V-1 T = -25 °C: 8.648952513 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.30242447 V-1 T = -25 °C: 14.94930563 V-1 |
| Break-through voltage: |
T = +20 °C: 444.5210899 V T = -25 °C: 407.5596052 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
