Show Hamamatsu Avalanche Photo Diode 1201012757
This is all the information about APD 1201012757. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1201012757 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D02 |
| Break-through voltage: |
447 V |
| Voltage for Gain 100 (T=+25°C): |
418.4 V |
| Dark current: |
8.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
334 |
| Position in Box: |
29 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10765 |
| |
|
| Shipment: |
|
| Grid number: |
252 |
| Position in grid: |
3 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 418.9840132 V T = -25 °C: 381.4417691 V |
| Voltage for Gain 150: |
T = +20 °C: 426.9621591 V T = -25 °C: 389.4657369 V |
| Voltage for Gain 200: |
T = +20 °C: 431.3968507 V T = -25 °C: 393.906692 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.531257189 V-1 T = -25 °C: 4.351211503 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.858206466 V-1 T = -25 °C: 8.367601427 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.44419087 V-1 T = -25 °C: 14.38210178 V-1 |
| Break-through voltage: |
T = +20 °C: 447.1748033 V T = -25 °C: 410.2517352 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
