Show Hamamatsu Avalanche Photo Diode 0924010737
This is all the information about APD 0924010737. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0924010737 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D06 |
| Break-through voltage: |
408 V |
| Voltage for Gain 100 (T=+25°C): |
378.5 V |
| Dark current: |
6.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
518 |
| Position in Box: |
7 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10696 |
| |
|
| Shipment: |
|
| Grid number: |
251 |
| Position in grid: |
6 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 378.8412022 V T = -25 °C: 343.7034039 V |
| Voltage for Gain 150: |
T = +20 °C: 386.8094383 V T = -25 °C: 351.0616484 V |
| Voltage for Gain 200: |
T = +20 °C: 391.2774886 V T = -25 °C: 355.2190964 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.596048074 V-1 T = -25 °C: 5.050208567 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.913761179 V-1 T = -25 °C: 9.383803922 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.68026471 V-1 T = -25 °C: 14.69707522 V-1 |
| Break-through voltage: |
T = +20 °C: 407.3316295 V T = -25 °C: 370.7783146 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
