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Show Hamamatsu Avalanche Photo Diode 0917010276 - Archived data from Tue, 11. August 2020 18:10:37 CEST


This is all the information about APD 0917010276. If it is wrong, edit the data.

Subdetector specification:  
Serial: 0917010276
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: Bochum
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: D02
Break-through voltage: 402 V
Voltage for Gain 100 (T=+25°C): 373.4 V
Dark current: 3 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 325
Position in Box: 18
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 366.3361303 V     T = -25 °C: 299.1954019 V
Voltage for Gain 150: T = +20 °C: 375.7787176 V     T = -25 °C: 313.0022608 V
Voltage for Gain 200: T = +20 °C: 381.1779334 V     T = -25 °C: 321.7061772 V
Gain/Voltage slope at M = 100: T = +20 °C: 3.814780177 V-1     T = -25 °C: 2.786795367 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 7.496901219 V-1     T = -25 °C: 4.727958864 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 11.56611565 V-1     T = -25 °C: 6.854885229 V-1
Break-through voltage: T = +20 °C: 401.5578376 V     T = -25 °C: 365.5520137 V
   
Notes:


Version history

Time Author Change comment
05. Feb 2021 11:30:01 CET jreher Updated box and position via API.
11. Aug 2020 18:10:37 CEST jreher Updated APD characteristics via API.
11. Aug 2020 17:53:22 CEST jreher Updated APD location via API.
21. Jul 2020 16:16:22 CEST jreher Updated APD batch assignment via API.
22. Jun 2016 15:36:12 CEST Tobias Imported from Hamamatsu datasheet.