Show Hamamatsu Avalanche Photo Diode 0910009738
This is all the information about APD 0910009738. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0910009738 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
F03 |
Break-through voltage: |
418 V |
Voltage for Gain 100 (T=+25°C): |
389.3 V |
Dark current: |
3.1 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
44 |
Position in Box: |
40 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10072 |
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Shipment: |
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Grid number: |
207 |
Position in grid: |
5 |
Arrival for irradiation: |
15. May 2016 |
Sent for analysis after irradiation: |
23. Jun 2016 |
Return for assembly: |
20. Dec 2016 |
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Irradiation: |
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Date: |
20. May 2016 |
Dose used: |
57 Gy |
Temperature: |
-25 °C |
Position: |
1 |
Bias voltage: |
320 V (connection unknown) |
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Annealing: |
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Date: |
20. May 2016 |
Temperature: |
80 °C |
Duration: |
8 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 389.6535266 V T = -25 °C: 353.4572624 V |
Voltage for Gain 150: |
T = +20 °C: 397.6175476 V T = -25 °C: 361.1002928 V |
Voltage for Gain 200: |
T = +20 °C: 402.0477309 V T = -25 °C: 365.4039553 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.519901214 V-1 T = -25 °C: 4.847176825 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.706658515 V-1 T = -25 °C: 9.462627256 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.73450828 V-1 T = -25 °C: 14.45988253 V-1 |
Break-through voltage: |
T = +20 °C: 418.073063 V T = -25 °C: 381.2922982 V |
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Notes: |
has been irradiated and annealed again (sent to Gießen on 24_07_2018, irradiated on 16_08_2018 with 30Gy at 20°C, annealed on 17_08_2018 at 80°C for 48h, sent to analysis on 21_08_2018)
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Characteristics
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Progression of the current during irradiation
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Version history