Show Hamamatsu Avalanche Photo Diode 0910009737
This is all the information about APD 0910009737. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0910009737 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
C06 |
Break-through voltage: |
415 V |
Voltage for Gain 100 (T=+25°C): |
386.1 V |
Dark current: |
4 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
44 |
Position in Box: |
33 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10072 |
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Shipment: |
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Grid number: |
207 |
Position in grid: |
3 |
Arrival for irradiation: |
15. May 2016 |
Sent for analysis after irradiation: |
23. Jun 2016 |
Return for assembly: |
20. Dec 2016 |
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Irradiation: |
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Date: |
20. May 2016 |
Dose used: |
57 Gy |
Temperature: |
-25 °C |
Position: |
1 |
Bias voltage: |
320 V (connection unknown) |
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Annealing: |
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Date: |
20. May 2016 |
Temperature: |
80 °C |
Duration: |
8 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 386.9137852 V T = -25 °C: 350.6893436 V |
Voltage for Gain 150: |
T = +20 °C: 394.8484826 V T = -25 °C: 358.2428265 V |
Voltage for Gain 200: |
T = +20 °C: 399.2511003 V T = -25 °C: 362.492039 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.488854878 V-1 T = -25 °C: 4.812084367 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.612947248 V-1 T = -25 °C: 9.540048973 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.6405741 V-1 T = -25 °C: 14.66779994 V-1 |
Break-through voltage: |
T = +20 °C: 414.1968098 V T = -25 °C: 377.3332834 V |
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Notes: |
has been irradiated and annealed again (sent to Gießen on 24_07_2018, irradiated on 16_08_2018 with 30Gy at 20°C, annealed on 17_08_2018 at 80°C for 48h, sent to analysis on 21_08_2018)
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Characteristics
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Progression of the current during irradiation
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Version history