Show Hamamatsu Avalanche Photo Diode 0905009364
This is all the information about APD 0905009364. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
0905009364 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
H10 |
Break-through voltage: |
409 V |
Voltage for Gain 100 (T=+25°C): |
381.2 V |
Dark current: |
5.1 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
331 |
Position in Box: |
3 |
EP1 batch: |
none |
EP1 batch after irradiation: |
none |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 381.9372828 V T = -25 °C: 346.4656094 V |
Voltage for Gain 150: |
T = +20 °C: 389.8077491 V T = -25 °C: 353.8999837 V |
Voltage for Gain 200: |
T = +20 °C: 394.1857535 V T = -25 °C: 358.0176196 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.59587487 V-1 T = -25 °C: 4.770167578 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.096239036 V-1 T = -25 °C: 9.427450938 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.21721081 V-1 T = -25 °C: 14.78048203 V-1 |
Break-through voltage: |
T = +20 °C: 406.510741 V T = -25 °C: 372.7099257 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history