Show Hamamatsu Avalanche Photo Diode 0902009234
This is all the information about APD 0902009234. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0902009234 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E03 |
Break-through voltage: |
403 V |
Voltage for Gain 100 (T=+25°C): |
373.9 V |
Dark current: |
9.8 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
365 |
Position in Box: |
8 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10556 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 374.6034634 V T = -25 °C: 339.6399349 V |
Voltage for Gain 150: |
T = +20 °C: 382.4289831 V T = -25 °C: 346.8367432 V |
Voltage for Gain 200: |
T = +20 °C: 386.8190145 V T = -25 °C: 350.884852 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.421224755 V-1 T = -25 °C: 4.8187922 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.526817864 V-1 T = -25 °C: 10.02191716 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.42095859 V-1 T = -25 °C: 16.19502351 V-1 |
Break-through voltage: |
T = +20 °C: 402.2253205 V T = -25 °C: 366.1171405 V |
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Notes: |
Wrong wafer number in serial number, correct wafer number is 3.
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Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
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Progression of the current during irradiation
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Version history