Show Hamamatsu Avalanche Photo Diode 0902009229
This is all the information about APD 0902009229. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0902009229 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
C03 |
Break-through voltage: |
401 V |
Voltage for Gain 100 (T=+25°C): |
373.5 V |
Dark current: |
5 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
366 |
Position in Box: |
15 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10557 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 373.6698563 V T = -25 °C: 339.0491718 V |
Voltage for Gain 150: |
T = +20 °C: 381.4869641 V T = -25 °C: 346.2818445 V |
Voltage for Gain 200: |
T = +20 °C: 385.8455098 V T = -25 °C: 350.3529363 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.443960475 V-1 T = -25 °C: 5.057444058 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.604730348 V-1 T = -25 °C: 9.450721293 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.94908724 V-1 T = -25 °C: 15.04224492 V-1 |
Break-through voltage: |
T = +20 °C: 400.9118396 V T = -25 °C: 365.3445834 V |
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Notes: |
Wrong wafer number in serial number, correct wafer number is 3.
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Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history