Show Hamamatsu Avalanche Photo Diode 0902009213
This is all the information about APD 0902009213. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0902009213 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F03 |
| Break-through voltage: |
400 V |
| Voltage for Gain 100 (T=+25°C): |
372.1 V |
| Dark current: |
9.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
183 |
| Position in Box: |
49 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10106 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
18. Apr 2019 |
| Sent for analysis after irradiation: |
09. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
04. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
05. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 373.1847903 V T = -25 °C: 338.3772868 V |
| Voltage for Gain 150: |
T = +20 °C: 380.9527125 V T = -25 °C: 345.5986574 V |
| Voltage for Gain 200: |
T = +20 °C: 385.274594 V T = -25 °C: 349.6546924 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.602030665 V-1 T = -25 °C: 4.897214356 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.271820395 V-1 T = -25 °C: 9.296484821 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.4958032 V-1 T = -25 °C: 16.80063446 V-1 |
| Break-through voltage: |
T = +20 °C: 394.8554729 V T = -25 °C: 364.0326391 V |
| |
|
| Notes: |
Wrong wafer number in serial number, correct wafer number is 3.
|
Characteristics
| Temperature |
Measurement |
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| No characteristics available! |
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Progression of the current during irradiation
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Version history
