Show Hamamatsu Avalanche Photo Diode 0902009206
This is all the information about APD 0902009206. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0902009206 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E07 |
Break-through voltage: |
401 V |
Voltage for Gain 100 (T=+25°C): |
372.6 V |
Dark current: |
17 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
183 |
Position in Box: |
42 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10106 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
18. Apr 2019 |
Sent for analysis after irradiation: |
09. Jul 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
04. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
05. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 372.6778258 V T = -25 °C: 337.7598504 V |
Voltage for Gain 150: |
T = +20 °C: 380.4688534 V T = -25 °C: 344.9633144 V |
Voltage for Gain 200: |
T = +20 °C: 384.8185699 V T = -25 °C: 349.0098991 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.438064638 V-1 T = -25 °C: 4.779625352 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.682770106 V-1 T = -25 °C: 9.923843876 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.23181051 V-1 T = -25 °C: 15.90909435 V-1 |
Break-through voltage: |
T = +20 °C: 400.5306785 V T = -25 °C: 364.0576626 V |
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Notes: |
Wrong wafer number in serial number, correct wafer number is 3.
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history