Show Hamamatsu Avalanche Photo Diode 0902009172
This is all the information about APD 0902009172. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0902009172 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
F11 |
Break-through voltage: |
407 V |
Voltage for Gain 100 (T=+25°C): |
379.3 V |
Dark current: |
8.2 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
294 |
Position in Box: |
50 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10358 |
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Shipment: |
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Grid number: |
183 |
Position in grid: |
4 |
Arrival for irradiation: |
30. Oct 2017 |
Sent for analysis after irradiation: |
17. Nov 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
16. Nov 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
1 |
Bias voltage: |
379.3 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 379.1262928 V T = -25 °C: 343.9468274 V |
Voltage for Gain 150: |
T = +20 °C: 387.0572452 V T = -25 °C: 351.3606084 V |
Voltage for Gain 200: |
T = +20 °C: 391.4784126 V T = -25 °C: 355.4253403 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.522993805 V-1 T = -25 °C: 5.600532236 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.825238287 V-1 T = -25 °C: 9.549524287 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.46061197 V-1 T = -25 °C: 15.85046958 V-1 |
Break-through voltage: |
T = +20 °C: 406.9061777 V T = -25 °C: 370.6744141 V |
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Notes: |
Wrong wafer number in serial number, correct wafer number is 3.
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history