Show Hamamatsu Avalanche Photo Diode 0902009165
This is all the information about APD 0902009165. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0902009165 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
assigned to 0902009165/2905032791 |
Unit: |
#1942 (barcode 1309020041) |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
blue |
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Manufacturer information: |
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Wafer position: |
E14 |
Break-through voltage: |
410 V |
Voltage for Gain 100 (T=+25°C): |
381.5 V |
Dark current: |
7.2 nA |
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Screening Logistics: |
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Available: |
No |
Storage Box: |
294 |
Position in Box: |
43 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10358 |
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Shipment: |
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Grid number: |
183 |
Position in grid: |
11 |
Arrival for irradiation: |
30. Oct 2017 |
Sent for analysis after irradiation: |
17. Nov 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
16. Nov 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
1 |
Bias voltage: |
381.5 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 381.8941293 V T = -25 °C: 346.1588537 V |
Voltage for Gain 150: |
T = +20 °C: 389.8277292 V T = -25 °C: 353.6363674 V |
Voltage for Gain 200: |
T = +20 °C: 394.2474311 V T = -25 °C: 357.7751803 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.563013174 V-1 T = -25 °C: 5.495720877 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.979630866 V-1 T = -25 °C: 9.638515775 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 13.85474235 V-1 T = -25 °C: 15.19563376 V-1 |
Break-through voltage: |
T = +20 °C: 410.1683342 V T = -25 °C: 373.5065868 V |
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Notes: |
Wrong wafer number in serial number, correct wafer number is 3.
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history