Show Hamamatsu Avalanche Photo Diode 0901009075
This is all the information about APD 0901009075. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0901009075 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2514028623/0901009075 |
| Unit: |
#1392 (barcode 1309014217) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D08 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
381.9 V |
| Dark current: |
5.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
56 |
| Position in Box: |
46 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10084 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
18. Apr 2019 |
| Sent for analysis after irradiation: |
04. Jun 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
29. May 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
29. May 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 382.46992 V T = -25 °C: 347.0400481 V |
| Voltage for Gain 150: |
T = +20 °C: 390.4106979 V T = -25 °C: 354.4458935 V |
| Voltage for Gain 200: |
T = +20 °C: 394.8510742 V T = -25 °C: 358.6379151 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.586508002 V-1 T = -25 °C: 4.763166502 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.859277607 V-1 T = -25 °C: 9.406990569 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.97253887 V-1 T = -25 °C: 14.4123166 V-1 |
| Break-through voltage: |
T = +20 °C: 410.8367819 V T = -25 °C: 374.0836863 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
