Show Hamamatsu Avalanche Photo Diode 0823008979
This is all the information about APD 0823008979. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0823008979 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 3104034115/0823008979 |
| Unit: |
#3157 (barcode 1309036585) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E02 |
| Break-through voltage: |
404 V |
| Voltage for Gain 100 (T=+25°C): |
376.2 V |
| Dark current: |
4.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
10 |
| Position in Box: |
34 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10164 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
18. Apr 2019 |
| Sent for analysis after irradiation: |
29. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
25. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
27. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 377.1590867 V T = -25 °C: 341.8714785 V |
| Voltage for Gain 150: |
T = +20 °C: 385.0139503 V T = -25 °C: 349.2107118 V |
| Voltage for Gain 200: |
T = +20 °C: 389.3939652 V T = -25 °C: 353.350347 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.541993267 V-1 T = -25 °C: 5.018228643 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.920396361 V-1 T = -25 °C: 9.313743242 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.62562218 V-1 T = -25 °C: 14.59451791 V-1 |
| Break-through voltage: |
T = +20 °C: 403.5929284 V T = -25 °C: 367.8435487 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
