Show Hamamatsu Avalanche Photo Diode 0822008905
This is all the information about APD 0822008905. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
0822008905 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
A07 |
Break-through voltage: |
412 V |
Voltage for Gain 100 (T=+25°C): |
383.7 V |
Dark current: |
5 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
292 |
Position in Box: |
40 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10206 |
|
|
Shipment: |
|
Grid number: |
128 |
Position in grid: |
8 |
Arrival for irradiation: |
20. Jun 2016 |
Sent for analysis after irradiation: |
08. Jul 2016 |
Return for assembly: |
04. Aug 2016 |
|
|
Irradiation: |
|
Date: |
30. Jun 2016 |
Dose used: |
30 Gy |
Temperature: |
25 °C |
Position: |
1 |
Bias voltage: |
320 V (connection unknown) |
|
|
Annealing: |
|
Date: |
01. Jul 2016 |
Temperature: |
80 °C |
Duration: |
8 h |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 383.7662843 V T = -25 °C: 348.4380588 V |
Voltage for Gain 150: |
T = +20 °C: 391.7652317 V T = -25 °C: 355.9200818 V |
Voltage for Gain 200: |
T = +20 °C: 396.2235151 V T = -25 °C: 360.1439091 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.594836597 V-1 T = -25 °C: 4.698064462 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.00497416 V-1 T = -25 °C: 9.42240964 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 13.85657723 V-1 T = -25 °C: 14.6726621 V-1 |
Break-through voltage: |
T = +20 °C: 411.480891 V T = -25 °C: 375.6199011 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history