Show Hamamatsu Avalanche Photo Diode 0821008873
This is all the information about APD 0821008873. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0821008873 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
assigned to 0821008873/2610029935 |
Unit: |
#1018 (barcode 1309011360) |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
blue |
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Manufacturer information: |
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Wafer position: |
B10 |
Break-through voltage: |
410 V |
Voltage for Gain 100 (T=+25°C): |
381.5 V |
Dark current: |
4.2 nA |
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Screening Logistics: |
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Available: |
No |
Storage Box: |
191 |
Position in Box: |
11 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10147 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
18. Apr 2019 |
Sent for analysis after irradiation: |
29. Jul 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
25. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
27. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 382.1734142 V T = -25 °C: 346.5983284 V |
Voltage for Gain 150: |
T = +20 °C: 390.0208351 V T = -25 °C: 353.9659194 V |
Voltage for Gain 200: |
T = +20 °C: 394.3888966 V T = -25 °C: 358.1135289 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.555942008 V-1 T = -25 °C: 4.70866858 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.962231449 V-1 T = -25 °C: 9.533438643 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 13.9797494 V-1 T = -25 °C: 15.07541851 V-1 |
Break-through voltage: |
T = +20 °C: 407.2706886 V T = -25 °C: 373.3938327 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history