Show Hamamatsu Avalanche Photo Diode 0821008827
This is all the information about APD 0821008827. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
0821008827 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
F07 |
Break-through voltage: |
406 V |
Voltage for Gain 100 (T=+25°C): |
377.8 V |
Dark current: |
4.1 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
195 |
Position in Box: |
27 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10154 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
18. Apr 2019 |
Sent for analysis after irradiation: |
29. Jul 2019 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
25. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
27. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 378.0538149 V T = -25 °C: 342.4226339 V |
Voltage for Gain 150: |
T = +20 °C: 385.8004206 V T = -25 °C: 349.8548789 V |
Voltage for Gain 200: |
T = +20 °C: 390.1666552 V T = -25 °C: 354.0261331 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.572645602 V-1 T = -25 °C: 4.730429471 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.034926852 V-1 T = -25 °C: 9.399564766 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.54801199 V-1 T = -25 °C: 14.58748024 V-1 |
Break-through voltage: |
T = +20 °C: 405.5502789 V T = -25 °C: 369.3532393 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history