Show Hamamatsu Avalanche Photo Diode 0820008779
This is all the information about APD 0820008779. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0820008779 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 0820008779/2317025552 |
| Unit: |
#1538 (barcode 1309016259) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C09 |
| Break-through voltage: |
412 V |
| Voltage for Gain 100 (T=+25°C): |
383.4 V |
| Dark current: |
3.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
190 |
| Position in Box: |
34 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10146 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
18. Apr 2019 |
| Sent for analysis after irradiation: |
29. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
25. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
27. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 384.3851753 V T = -25 °C: 348.6138869 V |
| Voltage for Gain 150: |
T = +20 °C: 392.2994748 V T = -25 °C: 356.0291292 V |
| Voltage for Gain 200: |
T = +20 °C: 396.6824162 V T = -25 °C: 360.2047754 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.44939519 V-1 T = -25 °C: 4.633324638 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.574805464 V-1 T = -25 °C: 9.298792004 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.82246415 V-1 T = -25 °C: 14.60945123 V-1 |
| Break-through voltage: |
T = +20 °C: 411.6577193 V T = -25 °C: 375.271949 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
