Show Hamamatsu Avalanche Photo Diode 0820008749
This is all the information about APD 0820008749. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
0820008749 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
assigned to 0820008749/0904009235 |
Unit: |
#3457 (barcode 1309035410) |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
blue |
|
|
Manufacturer information: |
|
Wafer position: |
G04 |
Break-through voltage: |
415 V |
Voltage for Gain 100 (T=+25°C): |
385.8 V |
Dark current: |
3.3 nA |
|
|
Screening Logistics: |
|
Available: |
No |
Storage Box: |
201 |
Position in Box: |
30 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10163 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
18. Apr 2019 |
Sent for analysis after irradiation: |
29. Jul 2019 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
25. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
27. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 386.3679177 V T = -25 °C: 350.6415061 V |
Voltage for Gain 150: |
T = +20 °C: 394.2566575 V T = -25 °C: 358.1180219 V |
Voltage for Gain 200: |
T = +20 °C: 398.6303208 V T = -25 °C: 362.3416774 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.458536194 V-1 T = -25 °C: 4.919779188 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.553649484 V-1 T = -25 °C: 9.049296935 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.71917978 V-1 T = -25 °C: 15.79133334 V-1 |
Break-through voltage: |
T = +20 °C: 414.5036633 V T = -25 °C: 378.2986088 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history