Show Hamamatsu Avalanche Photo Diode 0820008731
This is all the information about APD 0820008731. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0820008731 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B09 |
| Break-through voltage: |
415 V |
| Voltage for Gain 100 (T=+25°C): |
386.7 V |
| Dark current: |
4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
201 |
| Position in Box: |
15 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10163 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
18. Apr 2019 |
| Sent for analysis after irradiation: |
29. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
25. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
27. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 387.9667509 V T = -25 °C: 351.8120059 V |
| Voltage for Gain 150: |
T = +20 °C: 395.8013015 V T = -25 °C: 359.2883475 V |
| Voltage for Gain 200: |
T = +20 °C: 400.1647597 V T = -25 °C: 363.4908038 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.549867986 V-1 T = -25 °C: 4.880981518 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.992700788 V-1 T = -25 °C: 8.985985326 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.72751779 V-1 T = -25 °C: 15.76304666 V-1 |
| Break-through voltage: |
T = +20 °C: 414.4746316 V T = -25 °C: 378.1331078 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
