Show Hamamatsu Avalanche Photo Diode 0818008578
This is all the information about APD 0818008578. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0818008578 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G04 |
| Break-through voltage: |
415 V |
| Voltage for Gain 100 (T=+25°C): |
385.5 V |
| Dark current: |
2.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
292 |
| Position in Box: |
39 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10206 |
| |
|
| Shipment: |
|
| Grid number: |
67 |
| Position in grid: |
15 |
| Arrival for irradiation: |
15. May 2016 |
| Sent for analysis after irradiation: |
23. Jun 2016 |
| Return for assembly: |
29. Nov 2016 |
| |
|
| Irradiation: |
|
| Date: |
20. May 2016 |
| Dose used: |
250 Gy |
| Temperature: |
-25 °C |
| Position: |
1 |
| Bias voltage: |
320 V (connection unknown) |
| |
|
| Annealing: |
|
| Date: |
20. May 2016 |
| Temperature: |
80 °C |
| Duration: |
8 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 385.6012436 V T = -25 °C: 349.9972579 V |
| Voltage for Gain 150: |
T = +20 °C: 393.6224528 V T = -25 °C: 357.5569501 V |
| Voltage for Gain 200: |
T = +20 °C: 398.0966516 V T = -25 °C: 361.8108294 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.310436475 V-1 T = -25 °C: 4.805076718 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.989355415 V-1 T = -25 °C: 9.530433743 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.80339422 V-1 T = -25 °C: 14.88209353 V-1 |
| Break-through voltage: |
T = +20 °C: 411.8142185 V T = -25 °C: 378.0631884 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
