Show Hamamatsu Avalanche Photo Diode 0817008480
This is all the information about APD 0817008480. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0817008480 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F04 |
| Break-through voltage: |
406 V |
| Voltage for Gain 100 (T=+25°C): |
377.3 V |
| Dark current: |
3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
379 |
| Position in Box: |
26 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10579 |
| |
|
| Shipment: |
|
| Grid number: |
61 |
| Position in grid: |
19 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
10. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
08. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
377.3 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 377.3587683 V T = -25 °C: 342.5044569 V |
| Voltage for Gain 150: |
T = +20 °C: 385.2169663 V T = -25 °C: 349.8206988 V |
| Voltage for Gain 200: |
T = +20 °C: 389.594974 V T = -25 °C: 353.9318862 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.48664804 V-1 T = -25 °C: 4.770657349 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.793934167 V-1 T = -25 °C: 9.742632569 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.35368489 V-1 T = -25 °C: 15.52281912 V-1 |
| Break-through voltage: |
T = +20 °C: 401.347628 V T = -25 °C: 369.6001779 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
